All MOSFET. IXTH16P60P Datasheet

 

IXTH16P60P Datasheet and Replacement


   Type Designator: IXTH16P60P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 460 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 440 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.72 Ohm
   Package: TO247
 

 IXTH16P60P substitution

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IXTH16P60P Datasheet (PDF)

 7.1. Size:43K  ixys
 ixth16p20.pdf pdf_icon

IXTH16P60P

IXTH 16P20VDSS = -200 VStandard Power MOSFETID25 = -16 AP-Channel Enhancement ModeRDS(on) = 0.16 Avalanche RatedPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -200 VVDGR TJ = 25C to 150C; RGS = 1 M -200 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C -16 AIDM TC = 25

 8.1. Size:199K  ixys
 ixth16n50d2 ixtt16n50d2.pdf pdf_icon

IXTH16P60P

Advance Technical InformationDepletion Mode VDSX = 500VIXTH16N50D2MOSFET ID(on) > 16AIXTT16N50D2 RDS(on) 240m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C, RGS = 1M 500 VVGSX Continuous 20 VTO-268 (IXTT)VGSM Transient 30 VPD TC = 2

 8.2. Size:186K  ixys
 ixth160n10t ixtq160n10t.pdf pdf_icon

IXTH16P60P

Preliminary Technical InformationIXTH160N10T VDSS = 100 VTrenchMVTMIXTQ160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 VTO-3P (IXTQ)

 8.3. Size:184K  ixys
 ixth160n075t ixtq160n075t.pdf pdf_icon

IXTH16P60P

Preliminary Technical InformationIXTH160N075T VDSS = 75 VTrenchMVTMIXTQ160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C 75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 160 AD (TAB

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Datasheet: IXTH15N50L2 , IXTH160N075T , IXTH160N10T , IXTH160N15T , IXTH16N10D2 , IXTH16N20D2 , IXTH16N50D2 , IXTH16P20 , 7N65 , IXTH180N085T , IXTH180N10T , IXTH182N055T , IXTH1N100 , IXTH1N250 , IXTH200N075T , IXTH200N085T , IXTH200N10T .

History: APT4012BVR | PP9H06BD

Keywords - IXTH16P60P MOSFET datasheet

 IXTH16P60P cross reference
 IXTH16P60P equivalent finder
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