All MOSFET. IXTH16P60P Datasheet

 

IXTH16P60P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTH16P60P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 460 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 440 nS

Maximum Drain-Source On-State Resistance (Rds): 0.72 Ohm

Package: TO247

IXTH16P60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH16P60P Datasheet (PDF)

3.1. ixth16p20.pdf Size:43K _ixys

IXTH16P60P
IXTH16P60P

IXTH 16P20 VDSS = -200 V Standard Power MOSFET ID25 = -16 A P-Channel Enhancement Mode ? RDS(on) = 0.16 ? ? ? ? Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C -200 V VDGR TJ = 25C to 150C; RGS = 1 M? -200 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C -16 A IDM TC = 25C, pulse width limited

4.1. ixth160n075t ixtq160n075t.pdf Size:184K _ixys

IXTH16P60P
IXTH16P60P

Preliminary Technical Information IXTH160N075T VDSS = 75 V TrenchMVTM IXTQ160N075T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V ID25 TC = 25C 160 A D (TAB) ILRMS Lead Current Lim

4.2. ixth16n10d2 ixtt16n10d2.pdf Size:172K _ixys

IXTH16P60P
IXTH16P60P

Advance Technical Information Depletion Mode VDSX = 100V IXTH16N10D2 MOSFET ID(on) > 16A IXTT16N10D2 ≤ Ω RDS(on) ≤ 64mΩ ≤ Ω ≤ Ω ≤ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 100 V VGSX Continuous ±20 V VGSM Transient ±30 V TO-268 (IXTT) PD TC = 25°C 695

4.3. ixth160n15t.pdf Size:124K _ixys

IXTH16P60P
IXTH16P60P

Preliminary Technical Information IXTH160N15T VDSS = 150 V TrenchHVTM ID25 = 160 A Power MOSFET ? ? RDS(on) ? 9.6 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25C to 175C 150 V VDGR TJ = 25C to 175C; RGS = 1M? 150 V VGSM Transient 30 V ID25 TC = 25C 160 A G (TAB) ILRMS Lead Current Limit, RMS 75 A D S

4.4. ixth16n50d2 ixtt16n50d2.pdf Size:199K _ixys

IXTH16P60P
IXTH16P60P

Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 ? ? RDS(on) ? 240m? ? ? ? ? ? ? N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25C to 150C 500 V VDGX TJ = 25C to 150C, RGS = 1M? 500 V VGSX Continuous 20 V TO-268 (IXTT) VGSM Transient 30 V PD TC = 25C 695 W G TJ - 55 ... +150

4.5. ixth160n10t ixtq160n10t.pdf Size:186K _ixys

IXTH16P60P
IXTH16P60P

Preliminary Technical Information IXTH160N10T VDSS = 100 V TrenchMVTM IXTQ160N10T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C; RGS = 1 M? 100 V VGSM Transient 30 V TO-3P (IXTQ) ID25 TC = 25C 160 A

Datasheet: IXTH15N50L2 , IXTH160N075T , IXTH160N10T , IXTH160N15T , IXTH16N10D2 , IXTH16N20D2 , IXTH16N50D2 , IXTH16P20 , 2N5484 , IXTH180N085T , IXTH180N10T , IXTH182N055T , IXTH1N100 , IXTH1N250 , IXTH200N075T , IXTH200N085T , IXTH200N10T .

 


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