Справочник MOSFET. IXTH16P60P

 

IXTH16P60P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IXTH16P60P
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 460 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 92 nC
   trⓘ - Время нарастания: 440 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.72 Ohm
   Тип корпуса: TO247

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IXTH16P60P Datasheet (PDF)

 7.1. Size:43K  ixys
 ixth16p20.pdf

IXTH16P60P IXTH16P60P

IXTH 16P20VDSS = -200 VStandard Power MOSFETID25 = -16 AP-Channel Enhancement ModeRDS(on) = 0.16 Avalanche RatedPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -200 VVDGR TJ = 25C to 150C; RGS = 1 M -200 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C -16 AIDM TC = 25

 8.1. Size:199K  ixys
 ixth16n50d2 ixtt16n50d2.pdf

IXTH16P60P IXTH16P60P

Advance Technical InformationDepletion Mode VDSX = 500VIXTH16N50D2MOSFET ID(on) > 16AIXTT16N50D2 RDS(on) 240m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C, RGS = 1M 500 VVGSX Continuous 20 VTO-268 (IXTT)VGSM Transient 30 VPD TC = 2

 8.2. Size:186K  ixys
 ixth160n10t ixtq160n10t.pdf

IXTH16P60P IXTH16P60P

Preliminary Technical InformationIXTH160N10T VDSS = 100 VTrenchMVTMIXTQ160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 VTO-3P (IXTQ)

 8.3. Size:184K  ixys
 ixth160n075t ixtq160n075t.pdf

IXTH16P60P IXTH16P60P

Preliminary Technical InformationIXTH160N075T VDSS = 75 VTrenchMVTMIXTQ160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C 75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 160 AD (TAB

 8.4. Size:172K  ixys
 ixth16n10d2 ixtt16n10d2.pdf

IXTH16P60P IXTH16P60P

Advance Technical InformationDepletion Mode VDSX = 100VIXTH16N10D2MOSFET ID(on) > 16AIXTT16N10D2 RDS(on) 64m N-ChannelTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSX TJ = 25C to 150C 100 VVDGX TJ = 25C to 150C, RGS = 1M 100 VVGSX Continuous 20 VVGSM Transient 30 V TO-268 (IXTT)PD TC = 25C 695

 8.5. Size:124K  ixys
 ixth160n15t.pdf

IXTH16P60P IXTH16P60P

Preliminary Technical InformationIXTH160N15T VDSS = 150 VTrenchHVTMID25 = 160 APower MOSFET RDS(on) 9.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 175C 150 VVDGR TJ = 25C to 175C; RGS = 1M 150 VVGSM Transient 30 VID25 TC = 25C 160 AG(TAB)ILRMS Lead Curr

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