All MOSFET. IXTH200N085T Datasheet

 

IXTH200N085T Datasheet and Replacement


   Type Designator: IXTH200N085T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 90 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO247
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IXTH200N085T Datasheet (PDF)

 ..1. Size:205K  ixys
 ixth200n085t ixtq200n085t.pdf pdf_icon

IXTH200N085T

Preliminary Technical InformationIXTH200N085T VDSS = 85 VTrenchMVTMIXTQ200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25 C 20

 5.1. Size:184K  ixys
 ixth200n075t ixtq200n075t.pdf pdf_icon

IXTH200N085T

Preliminary Technical InformationIXTH200N075T VDSS = 75 VTrench GateIXTQ200N075T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 200 AILRMS

 8.1. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH200N085T

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 8.2. Size:105K  ixys
 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH200N085T

IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p

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