IXTH20N50D Specs and Replacement
Type Designator: IXTH20N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO247
IXTH20N50D substitution
IXTH20N50D datasheet
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒
ixth20n60 ixtm20n60.pdf
IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A RDS(on) = 0.35 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25 C, p... See More ⇒
ixta20n65x ixth20n65x ixtp20n65x.pdf
Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG... See More ⇒
Detailed specifications: IXTH180N085T , IXTH180N10T , IXTH182N055T , IXTH1N100 , IXTH1N250 , IXTH200N075T , IXTH200N085T , IXTH200N10T , IRF4905 , IXTH20P50P , IXTH220N055T , IXTH220N075T , IXTH22N50P , IXTH230N085T , IXTH240N055T , IXTH24N50L , IXTH24N50Q .
Keywords - IXTH20N50D MOSFET specs
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