IXTH20N50D Datasheet and Replacement
Type Designator: IXTH20N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 78.5 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO247
IXTH20N50D substitution
IXTH20N50D Datasheet (PDF)
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
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ixth20n60 ixtm20n60.pdf
IXTH 20N60 VDSS = 600 VMegaMOSTMFETIXTM 20N60 ID25 = 20 ARDS(on) = 0.35 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 15N60 15 ATO-204 AE (IXTM)20N60 20 AIDM TC = 25C, p
ixta20n65x ixth20n65x ixtp20n65x.pdf
Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG
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