IXTH24N50Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTH24N50Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 360
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Id|ⓘ - Maximum Drain Current: 24
A
Qgⓘ - Total Gate Charge: 82
nC
trⓘ - Rise Time: 500
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24
Ohm
Package:
TO247
IXTH24N50Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTH24N50Q
Datasheet (PDF)
5.1. Size:108K ixys
ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf 
VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A
8.1. Size:204K ixys
ixth240n055t ixtq240n055t.pdf
Preliminary Technical InformationIXTH240N055T VDSS = 55 VTrenchMVTMIXTQ240N055T ID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VID25 TC = 25 C 240
8.2. Size:337K ixys
ixtt240n15x4hv ixth240n15x4.pdf
Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
