IXTH24N50Q Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IXTH24N50Q
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 360 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 24 A
tr ⓘ - Время нарастания: 500 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: TO247
Аналог (замена) для IXTH24N50Q
IXTH24N50Q Datasheet (PDF)
ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VD (TAB)VGS Continuous 20 VVGSM Transient 30 VID25 TC = 25C 21N50 21 A
ixth240n055t ixtq240n055t.pdf

Preliminary Technical InformationIXTH240N055T VDSS = 55 VTrenchMVTMIXTQ240N055T ID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VID25 TC = 25 C 240
ixtt240n15x4hv ixth240n15x4.pdf

Advance Technical InformationX4-Class VDSS = 150VIXTT240N15X4HVPower MOSFETTM ID25 = 240AIXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXTT..HV)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 175C 150 V D (Tab)VDGR TJ = 25C to 175C, RGS = 1M 150 VTO-247 (IXTH)VGSS Cont
Другие MOSFET... IXTH20N50D , IXTH20P50P , IXTH220N055T , IXTH220N075T , IXTH22N50P , IXTH230N085T , IXTH240N055T , IXTH24N50L , IRFB3607 , IXTH24P20 , IXTH250N075T , IXTH260N055T2 , IXTH26N60P , IXTH26P20P , IXTH280N055T , IXTH28N50Q , IXTH2R4N120P .
History: IXFH26N50
History: IXFH26N50



Список транзисторов
Обновления
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