IXTH30N50L2 Datasheet. Specs and Replacement

Type Designator: IXTH30N50L2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO247

IXTH30N50L2 substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTH30N50L2 datasheet

 0.1. Size:142K  ixys
 ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf pdf_icon

IXTH30N50L2

IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continu... See More ⇒

 4.1. Size:211K  inchange semiconductor
 ixth30n50l.pdf pdf_icon

IXTH30N50L2

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTH30N50L FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

 5.1. Size:336K  ixys
 ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf pdf_icon

IXTH30N50L2

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET RDS(on) 200 m IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuo... See More ⇒

 5.2. Size:40K  ixys
 ixth30n45 ixth30n50.pdf pdf_icon

IXTH30N50L2

Preliminary Data Sheet VDSS ID25 RDS(on) MegaMOSTMFET IXTH 30N45 450 V 30 A 0.16 N-Channel Enhancement Mode IXTH 30N50 500 V 30 A 0.17 TO-247 AD Symbol Test Conditions Maximum Ratings D (TAB) 30N45 450 V VDSS TJ = 25 C to 150 C 30N50 500 V 30N45 450 V VDGR TJ = 25 C to 150 C; RGS = 1 M 30N50 500 V TO-247 SMD ( ...S ) VGS Continuous 20 V VGSM Transient 30 V ID... See More ⇒

SHOW MORE

Detailed specifications: IXTH26N60P, IXTH26P20P, IXTH280N055T, IXTH28N50Q, IXTH2R4N120P, IXTH300N04T2, IXTH30N25, IXTH30N50L, STP80NF70, IXTH30N50P, IXTH30N60L2, IXTH30N60P, IXTH32P20T, IXTH360N055T2, IXTH36N50P, IXTH36P10, IXTH36P15P

Keywords - IXTH30N50L2 MOSFET specs

 IXTH30N50L2 cross reference

 IXTH30N50L2 equivalent finder

 IXTH30N50L2 pdf lookup

 IXTH30N50L2 substitution

 IXTH30N50L2 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility