All MOSFET. IXTH52P10P Datasheet

 

IXTH52P10P Datasheet and Replacement


   Type Designator: IXTH52P10P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO247
 

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IXTH52P10P Datasheet (PDF)

 ..1. Size:186K  ixys
ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf pdf_icon

IXTH52P10P

PolarPTM VDSS = - 100VIXTA52P10PID25 = - 52APower MOSFETsIXTP52P10P RDS(on) 50m IXTQ52P10PP-Channel Enhancement ModeAvalanche RatedIXTH52P10PTO-3P (IXTQ)TO-263 AA (IXTA) TO-220AB (IXTP)DGGGSDG SSD (Tab)D D (Tab)S TabSymbol Test Conditions Maximum Ratings TO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 2

 ..2. Size:258K  inchange semiconductor
ixth52p10p.pdf pdf_icon

IXTH52P10P

Isc P-Channel MOSFET Transistor IXTH52P10PFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.1. Size:151K  ixys
ixth52n65x.pdf pdf_icon

IXTH52P10P

X-Class VDSS = 650VIXTH52N65XPower MOSFET ID25 = 52A RDS(on) 68m N-Channel Enhancement ModeTO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGD TabVGSS Continuous 30 VSVGSM Transient 40 VG = Gate D = DrainID25 TC = 25C52 AS = Source

 9.1. Size:187K  ixys
ixth500n04t2 ixtt500n04t2.pdf pdf_icon

IXTH52P10P

Advance Technical InformationTrenchT2TM VDSS = 40VIXTH500N04T2ID25 = 500APower MOSFETIXTT500N04T2 RDS(on) 1.6m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VVDGR TJ = 25C to 175C, RGS = 1M 40 VTO-268 (IXTT)VGSM T

Datasheet: IXTH48N20 , IXTH48P20P , IXTH4N150 , IXTH500N04T2 , IXTH50N25T , IXTH50N30 , IXTH50P085 , IXTH50P10 , NCEP15T14 , IXTH60N10 , IXTH60N15 , IXTH60N20L2 , IXTH60N25 , IXTH68P20T , IXTH6N100D2 , IXTH6N120 , IXTH6N150 .

History: NCE0157A | IXTK550N055T2 | RTF020P02 | RTR025P02TL | 7N65L-TF1-T | RT3J33M | RZY200P01TL

Keywords - IXTH52P10P MOSFET datasheet

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