IXTH6N100D2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTH6N100D2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 95 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO247
IXTH6N100D2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTH6N100D2 Datasheet (PDF)
ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf
Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTA6N100D2MOSFET ID(on) > 6AIXTP6N100D2 RDS(on) 2.2 IXTH6N100D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ -
ixth6n120 ixtt6n120.pdf
IXTH 6N120 VDSS = 1200 VHigh VoltageIXTT 6N120 ID25 = 6 APower MOSFET RDS(on) = 2.6 N-Channel Enhancement ModeAvalanche RatedPreliminary Data SheetTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C6 A
ixth6n150.pdf
Advance Technical InformationHigh Voltage VDSS = 1500VIXTH6N150ID25 = 6APower MOSFET RDS(on) 3.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 20 VSVGSM Transient 30
Datasheet: IXTH50P085 , IXTH50P10 , IXTH52P10P , IXTH60N10 , IXTH60N15 , IXTH60N20L2 , IXTH60N25 , IXTH68P20T , IRFB3306 , IXTH6N120 , IXTH6N150 , IXTH6N50D2 , IXTH72N20 , IXTH75N10L2 , IXTH75N15 , IXTH76N25T , IXTH76P10T .
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