All MOSFET. IXTH72N20 Datasheet

 

IXTH72N20 Datasheet and Replacement


   Type Designator: IXTH72N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 72 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 170 nC
   trⓘ - Rise Time: 200 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO247
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IXTH72N20 Datasheet (PDF)

 7.1. Size:112K  ixys
ixtt72n10 ixth72n10.pdf pdf_icon

IXTH72N20

Advance Technical InformationIXTH 72N20 VDSS = 200 VHigh CurrentIXTT 72N20 ID25 = 72 APower MOSFET RDS(on) = 33 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C72 AIDM TC =

 9.1. Size:74K  1
ixth7p50 ixth8p50.pdf pdf_icon

IXTH72N20

VDSS ID25 RDS(on)IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFETIXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C 7P50 -7 A8P50 -8 AIDM TC = 25C, pulse w

 9.2. Size:579K  ixys
ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTH72N20

VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30

 9.3. Size:583K  ixys
ixth75n15 ixtt75n15.pdf pdf_icon

IXTH72N20

IXTH 75N15 VDSS = 150 VHigh CurrentIXTT 75N15 ID25 = 75 APower MOSFET RDS(on) = 23 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 M 150 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C75 AIDM TC = 25C, pulse width limited by T

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTV110N25TS | AUIRF7675M2

Keywords - IXTH72N20 MOSFET datasheet

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