IXTH75N15 Datasheet. Specs and Replacement

Type Designator: IXTH75N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO247

IXTH75N15 substitution

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IXTH75N15 datasheet

 ..1. Size:583K  ixys
 ixth75n15 ixtt75n15.pdf pdf_icon

IXTH75N15

IXTH 75N15 VDSS = 150 V High Current IXTT 75N15 ID25 = 75 A Power MOSFET RDS(on) = 23 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C75 A IDM TC = 25 C, pulse width limited by T... See More ⇒

 6.1. Size:579K  ixys
 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTH75N15

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30 ... See More ⇒

 6.2. Size:139K  ixys
 ixth75n10l2 ixtt75n10l2.pdf pdf_icon

IXTH75N15

Advance Technical Information LinearL2TM Power VDSS = 100V IXTH75N10L2 MOSFET w/extended ID25 = 75A IXTT75N10L2 RDS(on) 21m FBSOA D D D D O D O N-Channel Enhancement Mode RGi Guaranteed FBSOA w w G O Avalanche Rated TO-247 (IXTH) O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 100 V D D (Tab) S VDGR TJ = 25... See More ⇒

 9.1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH75N15

VDSS ID25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFET IXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 7P50 -7 A 8P50 -8 A IDM TC = 25 C, pulse w... See More ⇒

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Detailed specifications: IXTH60N25, IXTH68P20T, IXTH6N100D2, IXTH6N120, IXTH6N150, IXTH6N50D2, IXTH72N20, IXTH75N10L2, MMIS60R580P, IXTH76N25T, IXTH76P10T, IXTH80N20L, IXTH86N25T, IXTH88N15, IXTH88N30P, IXTH90N15T, IXTH90P10P

Keywords - IXTH75N15 MOSFET specs

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