IXTH75N15 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTH75N15
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 330 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 210 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.023 Ohm
Тип корпуса: TO247
IXTH75N15 Datasheet (PDF)
ixth75n15 ixtt75n15.pdf
IXTH 75N15 VDSS = 150 VHigh CurrentIXTT 75N15 ID25 = 75 APower MOSFET RDS(on) = 23 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 M 150 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C75 AIDM TC = 25C, pulse width limited by T
ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf
VDSS ID25 RDS(on)MegaMOSTMFETIXTH / IXTM 67N10100 V 67 A 25 mIXTH / IXTM 75N10100 V 75 A 20 mIXTT 75N10N-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VTO-204 AE (IXTM)VGS Continuous 20 VVGSM Transient 30
ixth75n10l2 ixtt75n10l2.pdf
Advance Technical InformationLinearL2TM Power VDSS = 100VIXTH75N10L2MOSFET w/extended ID25 = 75AIXTT75N10L2 RDS(on) 21m FBSOADDDDO DON-Channel Enhancement ModeRGiGuaranteed FBSOAwwG OAvalanche RatedTO-247 (IXTH)OSSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 100 V DD (Tab)SVDGR TJ = 25
ixth7p50 ixth8p50.pdf
VDSS ID25 RDS(on)IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFETIXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C -500 VVDGR TJ = 25C to 150C; RGS = 1 M -500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C 7P50 -7 A8P50 -8 AIDM TC = 25C, pulse w
ixtt72n10 ixth72n10.pdf
Advance Technical InformationIXTH 72N20 VDSS = 200 VHigh CurrentIXTT 72N20 ID25 = 72 APower MOSFET RDS(on) = 33 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 M 200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C72 AIDM TC =
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
