All MOSFET. IXTH88N30P Datasheet

 

IXTH88N30P MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTH88N30P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 600 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 88 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 250 nS

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO247

IXTH88N30P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTH88N30P Datasheet (PDF)

1.1. ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf Size:324K _ixys

IXTH88N30P
IXTH88N30P

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET ? ? IXTQ 88N30P RDS(on) ? 40 m? ? ? ? ? ? ? IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGS Continuous 20 V TO-264 (IXTK) VGSM Transient 30 V ID25 TC

5.1. ixth80n65x2.pdf Size:113K _ixys

IXTH88N30P
IXTH88N30P

Advance Technical Information X2-Class VDSS = 650V IXTH80N65X2 Power MOSFETTM ID25 = 80A   RDS(on)    40m     N-Channel Enhancement Mode Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings D S D (Tab) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V G = Gate D = Drain S = Source Tab = Drain VGSS Contin

5.2. ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf Size:168K _ixys

IXTH88N30P
IXTH88N30P

Advance Technical Information LinearL2TM Power VDSS = 75V IXTA80N075L2 MOSFETs w/Extended ID25 = 80A IXTP80N075L2   RDS(on)    24m     FBSOA IXTH80N075L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 75 V VDGR TJ = 25

 5.3. ixth8p50 ixtt8p50.pdf Size:515K _ixys

IXTH88N30P
IXTH88N30P

IXTH 8P50 VDSS = -500 V Standard Power IXTT 8P50 ID25 = -8 A MOSFET ? RDS(on) = 1.2 ? ? ? ? P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C -500 V VDGR TJ = 25C to 150C; RGS = 1 M? -500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) ID25 TC = 25C-8 A IDM TC = 25C, pulse width limite

Datasheet: IXTH72N20 , IXTH75N10L2 , IXTH75N15 , IXTH76N25T , IXTH76P10T , IXTH80N20L , IXTH86N25T , IXTH88N15 , APT50M38JFLL , IXTH90N15T , IXTH90P10P , IXTH96N20P , IXTH96N25T , IXTH96P085T , IXTJ36N20 , IXTK100N25P , IXTK102N30P .

Back to Top

 


IXTH88N30P
  IXTH88N30P
  IXTH88N30P
 

social 

LIST

Last Update

MOSFET: SI3850ADV | SI3805DV | SI3590DV | SI3588DV | SI3586DV | SI3585CDV | SI3552DV | SI3499DV | SI3495DV | SI3493DV | SI3493BDV | SI3483DV | SI3483CDV | SI3481DV | SI3477DV |