All MOSFET. IXTH96P085T Datasheet

 

IXTH96P085T Datasheet and Replacement


   Type Designator: IXTH96P085T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO247
 

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IXTH96P085T Datasheet (PDF)

 8.1. Size:198K  ixys
 ixth96n20p ixtt96n20p ixtq96n20p.pdf pdf_icon

IXTH96P085T

IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient

 8.2. Size:239K  ixys
 ixth96n20p ixtq96n20p ixtt96n20p.pdf pdf_icon

IXTH96P085T

IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient

Datasheet: IXTH80N20L , IXTH86N25T , IXTH88N15 , IXTH88N30P , IXTH90N15T , IXTH90P10P , IXTH96N20P , IXTH96N25T , IRF840 , IXTJ36N20 , IXTK100N25P , IXTK102N30P , IXTK110N20L2 , IXTK110N30 , IXTK120N20P , IXTK120N25 , IXTK120N25P .

History: FDB6021P | IXFH60N20 | NCE80T560F | IXTK140N30P | IXTH88N30P | SSM6J412TU | MRF5007R1

Keywords - IXTH96P085T MOSFET datasheet

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