IXTH96P085T Datasheet. Specs and Replacement

Type Designator: IXTH96P085T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 298 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO247

IXTH96P085T substitution

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IXTH96P085T datasheet

 8.1. Size:198K  ixys
 ixth96n20p ixtt96n20p ixtq96n20p.pdf pdf_icon

IXTH96P085T

IXTH 96N20P VDSS = 200 V PolarHTTM IXTQ 96N20P ID25 = 96 A Power MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 200 V S (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGSS Continous 20 V TO-3P (IXTQ) VGSM Transient ... See More ⇒

 8.2. Size:239K  ixys
 ixth96n20p ixtq96n20p ixtt96n20p.pdf pdf_icon

IXTH96P085T

IXTH 96N20P VDSS = 200 V PolarHTTM IXTQ 96N20P ID25 = 96 A Power MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 200 V S (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGSS Continous 20 V TO-3P (IXTQ) VGSM Transient ... See More ⇒

Detailed specifications: IXTH80N20L, IXTH86N25T, IXTH88N15, IXTH88N30P, IXTH90N15T, IXTH90P10P, IXTH96N20P, IXTH96N25T, 20N60, IXTJ36N20, IXTK100N25P, IXTK102N30P, IXTK110N20L2, IXTK110N30, IXTK120N20P, IXTK120N25, IXTK120N25P

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