All MOSFET. IXTJ36N20 Datasheet

 

IXTJ36N20 Datasheet and Replacement


   Type Designator: IXTJ36N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO268 I3PAK
 

 IXTJ36N20 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXTJ36N20 Datasheet (PDF)

 9.1. Size:113K  ixys
 ixtj3n150.pdf pdf_icon

IXTJ36N20

Advance Technical InformationHigh Voltage VDSS = 1500VIXTJ3N150ID25 = 2.3APower MOSFET RDS(on) 8.0 (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeISO TO-247TME153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VG

Datasheet: IXTH86N25T , IXTH88N15 , IXTH88N30P , IXTH90N15T , IXTH90P10P , IXTH96N20P , IXTH96N25T , IXTH96P085T , IRF540 , IXTK100N25P , IXTK102N30P , IXTK110N20L2 , IXTK110N30 , IXTK120N20P , IXTK120N25 , IXTK120N25P , IXTK128N15 .

History: IXTT1N300P3HV | IXTH96N20P | ME2604-G | 7N65G-TQ2-R | FTK15N10D | RQJ0305EQDQS | AP78T10GP

Keywords - IXTJ36N20 MOSFET datasheet

 IXTJ36N20 cross reference
 IXTJ36N20 equivalent finder
 IXTJ36N20 lookup
 IXTJ36N20 substitution
 IXTJ36N20 replacement

 

 
Back to Top

 


 
.