IXTJ36N20 Datasheet. Specs and Replacement

Type Designator: IXTJ36N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO268 I3PAK

IXTJ36N20 substitution

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IXTJ36N20 datasheet

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IXTJ36N20

Advance Technical Information High Voltage VDSS = 1500V IXTJ3N150 ID25 = 2.3A Power MOSFET RDS(on) 8.0 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G... See More ⇒

Detailed specifications: IXTH86N25T, IXTH88N15, IXTH88N30P, IXTH90N15T, IXTH90P10P, IXTH96N20P, IXTH96N25T, IXTH96P085T, IRF540N, IXTK100N25P, IXTK102N30P, IXTK110N20L2, IXTK110N30, IXTK120N20P, IXTK120N25, IXTK120N25P, IXTK128N15

Keywords - IXTJ36N20 MOSFET specs

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