IXTK90P20P Datasheet. Specs and Replacement
Type Designator: IXTK90P20P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 315 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: TO264
IXTK90P20P substitution
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IXTK90P20P datasheet
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Detailed specifications: IXTK62N25, IXTK75N30, IXTK80N25, IXTK82N25P, IXTK88N30P, IXTK8N150L, IXTK90N15, IXTK90N25L2, AON7410, IXTL2x180N10T, IXTL2x200N085T, IXTL2x220N075T, IXTL2x240N055T, IXTN110N20L2, IXTN120N25, IXTN170P10P, IXTN17N120L
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