IXTL2x220N075T
MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTL2x220N075T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 120
A
Qgⓘ - Total Gate Charge: 165
nC
trⓘ - Rise Time: 50
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package: ISOPLUSI5PAK
IXTL2x220N075T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTL2x220N075T
Datasheet (PDF)
..1. Size:66K ixys
ixtl2x220n075t.pdf
Advance Technical InformationTrenchMVTM IXTL2x220N075T VDSS = 75 VID25 = 2x120 APower MOSFETs RDS(on) 5.5 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGAvalanche RatedISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; R
7.1. Size:66K ixys
ixtl2x240n055t.pdf
Advance Technical InformationIXTL2x240N055T VDSS =55 VTrenchMVTMID25 = 2x140 APower MOSFETs RDS(on) 4.4 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated RG RGISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RG
7.2. Size:66K ixys
ixtl2x200n085t.pdf
Advance Technical InformationTrenchMVTMIXTL2x200N085TVDSS = 85 VID25 = 2x112 APower MOSFETs RDS(on) 6.0 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGAvalanche RatedISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C;
8.1. Size:66K ixys
ixtl2x180n10t.pdf
Advance Technical InformationTrenchMVTMIXTL2x180N10TVDSS = 100 VID25 = 2x100 APower MOSFETs RDS(on) 7.4 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGISOPLUS i5-PakTM (IXTL)Avalanche RatedS G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175
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