All MOSFET. IXTN120N25 Datasheet

 

IXTN120N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTN120N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 730 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 360 nC
   trⓘ - Rise Time: 350 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT227B

 IXTN120N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTN120N25 Datasheet (PDF)

 7.1. Size:177K  ixys
 ixtn120p20t.pdf

IXTN120N25 IXTN120N25

Advance Technical InformationTrenchPTM VDSS = - 200VIXTN120P20TPower MOSFETs ID25 = - 106A RDS(on) 30m trr 300nsP-Channel Enhancement ModeAvalanche RatedminiBLOCFast Intrinsic RectifierE153432SGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C - 200 VSVDGR TJ = 25C to 150C, RGS = 1M -

 9.1. Size:170K  ixys
 ixtn110n20l2.pdf

IXTN120N25 IXTN120N25

Advance Technical Information Linear L2TM Power VDSS = 200V IXTN110N20L2 MOSFET w/Extended ID25 = 100A 24m FBSOA RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C, RGS = 1M 200 VVGSS Co

 9.2. Size:126K  ixys
 ixtn102n65x2.pdf

IXTN120N25 IXTN120N25

Advance Technical InformationX2-Class VDSS = 650VIXTN102N65X2Power MOSFET ID25 = 76A RDS(on) 30m N-Channel Enhancement ModeAvalanche RatedminiBLOCFast Intrinsic DiodeE153432SGSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VSVGSS Continuous 30 VDVG

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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