IXTN120N25 Datasheet. Specs and Replacement

Type Designator: IXTN120N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 730 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 350 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT227B

IXTN120N25 substitution

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IXTN120N25 datasheet

 7.1. Size:177K  ixys
 ixtn120p20t.pdf pdf_icon

IXTN120N25

Advance Technical Information TrenchPTM VDSS = - 200V IXTN120P20T Power MOSFETs ID25 = - 106A RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated miniBLOC Fast Intrinsic Rectifier E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C - 200 V S VDGR TJ = 25 C to 150 C, RGS = 1M -... See More ⇒

 9.1. Size:170K  ixys
 ixtn110n20l2.pdf pdf_icon

IXTN120N25

Advance Technical Information Linear L2TM Power VDSS = 200V IXTN110N20L2 MOSFET w/Extended ID25 = 100A 24m FBSOA RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V VGSS Co... See More ⇒

 9.2. Size:126K  ixys
 ixtn102n65x2.pdf pdf_icon

IXTN120N25

Advance Technical Information X2-Class VDSS = 650V IXTN102N65X2 Power MOSFET ID25 = 76A RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated miniBLOC Fast Intrinsic Diode E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Continuous 30 V D VG... See More ⇒

Detailed specifications: IXTK90N15, IXTK90N25L2, IXTK90P20P, IXTL2x180N10T, IXTL2x200N085T, IXTL2x220N075T, IXTL2x240N055T, IXTN110N20L2, IRF530, IXTN170P10P, IXTN17N120L, IXTN200N10L2, IXTN200N10T, IXTN22N100L, IXTN30N100L, IXTN320N10T, IXTN32P60P

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