IXTN30N100L Datasheet. Specs and Replacement

Type Designator: IXTN30N100L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 800 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V

Qg ⓘ - Total Gate Charge: 545 nC

tr ⓘ - Rise Time: 1000 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: SOT227B

IXTN30N100L substitution

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IXTN30N100L datasheet

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Detailed specifications: IXTL2x240N055T, IXTN110N20L2, IXTN120N25, IXTN170P10P, IXTN17N120L, IXTN200N10L2, IXTN200N10T, IXTN22N100L, TK10A60D, IXTN320N10T, IXTN32P60P, IXTN40P50P, IXTN46N50L, IXTN550N055T2, IXTN5N250, IXTN600N04T2, IXTN60N50L2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.