IXTN320N10T Datasheet and Replacement
Type Designator: IXTN320N10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 680 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 320 A
tr ⓘ - Rise Time: 100 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: SOT227
IXTN320N10T substitution
IXTN320N10T Datasheet (PDF)
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Datasheet: IXTN110N20L2 , IXTN120N25 , IXTN170P10P , IXTN17N120L , IXTN200N10L2 , IXTN200N10T , IXTN22N100L , IXTN30N100L , P60NF06 , IXTN32P60P , IXTN40P50P , IXTN46N50L , IXTN550N055T2 , IXTN5N250 , IXTN600N04T2 , IXTN60N50L2 , IXTN62N50L .
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