IXTN320N10T Datasheet. Specs and Replacement

Type Designator: IXTN320N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 680 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 320 A

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: SOT227

IXTN320N10T substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTN320N10T datasheet

No PDF!

Detailed specifications: IXTN110N20L2, IXTN120N25, IXTN170P10P, IXTN17N120L, IXTN200N10L2, IXTN200N10T, IXTN22N100L, IXTN30N100L, AO4407, IXTN32P60P, IXTN40P50P, IXTN46N50L, IXTN550N055T2, IXTN5N250, IXTN600N04T2, IXTN60N50L2, IXTN62N50L

Keywords - IXTN320N10T MOSFET specs

 IXTN320N10T cross reference

 IXTN320N10T equivalent finder

 IXTN320N10T pdf lookup

 IXTN320N10T substitution

 IXTN320N10T replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs