IXTN32P60P Datasheet. Specs and Replacement

Type Designator: IXTN32P60P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 480 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SOT227

IXTN32P60P substitution

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IXTN32P60P datasheet

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Detailed specifications: IXTN120N25, IXTN170P10P, IXTN17N120L, IXTN200N10L2, IXTN200N10T, IXTN22N100L, IXTN30N100L, IXTN320N10T, BS170, IXTN40P50P, IXTN46N50L, IXTN550N055T2, IXTN5N250, IXTN600N04T2, IXTN60N50L2, IXTN62N50L, IXTN8N150L

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