IXTN5N250 Datasheet and Replacement
Type Designator: IXTN5N250
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 700 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1200 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm
Package: SOT227
IXTN5N250 substitution
IXTN5N250 Datasheet (PDF)
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Datasheet: IXTN200N10T , IXTN22N100L , IXTN30N100L , IXTN320N10T , IXTN32P60P , IXTN40P50P , IXTN46N50L , IXTN550N055T2 , AO3401 , IXTN600N04T2 , IXTN60N50L2 , IXTN62N50L , IXTN8N150L , IXTN90N25L2 , IXTN90P20P , IXTP01N100D , IXTP02N120P .
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