IXTN5N250 Datasheet. Specs and Replacement

Type Designator: IXTN5N250

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 700 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 2500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm

Package: SOT227

IXTN5N250 substitution

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IXTN5N250 datasheet

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Detailed specifications: IXTN200N10T, IXTN22N100L, IXTN30N100L, IXTN320N10T, IXTN32P60P, IXTN40P50P, IXTN46N50L, IXTN550N055T2, 2SK3568, IXTN600N04T2, IXTN60N50L2, IXTN62N50L, IXTN8N150L, IXTN90N25L2, IXTN90P20P, IXTP01N100D, IXTP02N120P

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