IXTN8N150L Datasheet. Specs and Replacement

Type Designator: IXTN8N150L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 545 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1700 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm

Package: SOT227B

IXTN8N150L substitution

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IXTN8N150L datasheet

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Detailed specifications: IXTN32P60P, IXTN40P50P, IXTN46N50L, IXTN550N055T2, IXTN5N250, IXTN600N04T2, IXTN60N50L2, IXTN62N50L, SI2302, IXTN90N25L2, IXTN90P20P, IXTP01N100D, IXTP02N120P, IXTP02N50D, IXTP05N100, IXTP05N100M, IXTP05N100P

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