IXTN8N150L Datasheet and Replacement
Type Designator: IXTN8N150L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 545 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1700 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.6 Ohm
Package: SOT227B
IXTN8N150L substitution
IXTN8N150L Datasheet (PDF)
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Datasheet: IXTN32P60P , IXTN40P50P , IXTN46N50L , IXTN550N055T2 , IXTN5N250 , IXTN600N04T2 , IXTN60N50L2 , IXTN62N50L , 2N60 , IXTN90N25L2 , IXTN90P20P , IXTP01N100D , IXTP02N120P , IXTP02N50D , IXTP05N100 , IXTP05N100M , IXTP05N100P .
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