IXTN90N25L2 Datasheet. Specs and Replacement

Type Designator: IXTN90N25L2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 735 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 266 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOT227

IXTN90N25L2 substitution

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IXTN90N25L2 datasheet

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Detailed specifications: IXTN40P50P, IXTN46N50L, IXTN550N055T2, IXTN5N250, IXTN600N04T2, IXTN60N50L2, IXTN62N50L, IXTN8N150L, AO3407, IXTN90P20P, IXTP01N100D, IXTP02N120P, IXTP02N50D, IXTP05N100, IXTP05N100M, IXTP05N100P, IXTP06N120P

Keywords - IXTN90N25L2 MOSFET specs

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