IXTN90P20P Datasheet and Replacement

   Type Designator: IXTN90P20P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 205 nC
   tr ⓘ - Rise Time: 315 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SOT227
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