IXTN90P20P Datasheet and Replacement
Type Designator: IXTN90P20P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 315 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: SOT227
IXTN90P20P substitution
IXTN90P20P Datasheet (PDF)
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Datasheet: IXTN46N50L , IXTN550N055T2 , IXTN5N250 , IXTN600N04T2 , IXTN60N50L2 , IXTN62N50L , IXTN8N150L , IXTN90N25L2 , RU6888R , IXTP01N100D , IXTP02N120P , IXTP02N50D , IXTP05N100 , IXTP05N100M , IXTP05N100P , IXTP06N120P , IXTP08N100D2 .
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