IXTN90P20P Datasheet. Specs and Replacement

Type Designator: IXTN90P20P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 315 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: SOT227

IXTN90P20P substitution

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IXTN90P20P datasheet

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Detailed specifications: IXTN46N50L, IXTN550N055T2, IXTN5N250, IXTN600N04T2, IXTN60N50L2, IXTN62N50L, IXTN8N150L, IXTN90N25L2, 18N50, IXTP01N100D, IXTP02N120P, IXTP02N50D, IXTP05N100, IXTP05N100M, IXTP05N100P, IXTP06N120P, IXTP08N100D2

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