All MOSFET. IXTP02N120P Datasheet

 

IXTP02N120P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTP02N120P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.7 nC
   trⓘ - Rise Time: 1600 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 75 Ohm
   Package: TO220

 IXTP02N120P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP02N120P Datasheet (PDF)

 ..1. Size:123K  ixys
 ixty02n120p ixtp02n120p.pdf

IXTP02N120P IXTP02N120P

Advance Technical InformationPolarTM VDSS = 1200VIXTP02N120PID25 = 0.2APower MOSFETIXTY02N120P RDS(on) 75 N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsGDD (Tab)SVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VTO-252 (IXTY)VGSS Continuous 20 VVGSM

 7.1. Size:94K  ixys
 ixtp02n50d ixtu02n50d ixty02n50d.pdf

IXTP02N120P IXTP02N120P

IXTP 02N50DVDSS = 500 VHigh Voltage MOSFETIXTU 02N50DID25 = 200 mAN-Channel, Depletion ModeIXTY 02N50DRDS(on) = 30 Preliminary Data SheetSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C 500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VGDSIDSS TC = 25C; TJ = 25C to 150C

 9.1. Size:177K  ixys
 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf

IXTP02N120P IXTP02N120P

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -

 9.2. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf

IXTP02N120P IXTP02N120P

Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ

 9.3. Size:94K  ixys
 ixtp01n100d ixtu01n100d ixty01n100d.pdf

IXTP02N120P IXTP02N120P

IXTP 01N100DVDSS = 1000 VHigh Voltage MOSFETIXTU 01N100DID25 = 100 mAN-Channel, Depletion ModeIXTY 01N100DRDS(on) = 110 Preliminary Data SheetSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSIDSS TC = 25C; TJ = 25C to

 9.4. Size:177K  ixys
 ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf

IXTP02N120P IXTP02N120P

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY08N50D2MOSFET ID(on) > 800mAIXTA08N50D2 RDS(on) 4.6 IXTP08N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ - 55

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BLF7G15LS-200

 

 
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