IXTP02N120P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IXTP02N120P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 1600 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 75 Ohm
Тип корпуса: TO220
Аналог (замена) для IXTP02N120P
IXTP02N120P Datasheet (PDF)
ixty02n120p ixtp02n120p.pdf

Advance Technical InformationPolarTM VDSS = 1200VIXTP02N120PID25 = 0.2APower MOSFETIXTY02N120P RDS(on) 75 N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsGDD (Tab)SVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VTO-252 (IXTY)VGSS Continuous 20 VVGSM
ixtp02n50d ixtu02n50d ixty02n50d.pdf

IXTP 02N50DVDSS = 500 VHigh Voltage MOSFETIXTU 02N50DID25 = 200 mAN-Channel, Depletion ModeIXTY 02N50DRDS(on) = 30 Preliminary Data SheetSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSX TJ = 25C to 150C 500 VVDGX TJ = 25C to 150C 500 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VGDSIDSS TC = 25C; TJ = 25C to 150C
ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -
ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf

Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ
Другие MOSFET... IXTN5N250 , IXTN600N04T2 , IXTN60N50L2 , IXTN62N50L , IXTN8N150L , IXTN90N25L2 , IXTN90P20P , IXTP01N100D , CS150N03A8 , IXTP02N50D , IXTP05N100 , IXTP05N100M , IXTP05N100P , IXTP06N120P , IXTP08N100D2 , IXTP08N100P , IXTP08N120P .
History: BUK762R7-30B | BUK7E4R3-75C | BUK7Y25-40B | BLF7G27L-100
History: BUK762R7-30B | BUK7E4R3-75C | BUK7Y25-40B | BLF7G27L-100



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent | tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102