IXTP2N100P Specs and Replacement

Type Designator: IXTP2N100P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 800 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm

Package: TO220

IXTP2N100P substitution

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IXTP2N100P datasheet

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 ixtm2n100 ixtm2n100a ixtm2n95 ixtm2n95a ixtp2n100a ixtp2n95 ixtp2n95a.pdf pdf_icon

IXTP2N100P

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IXTP2N100P

High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 RDS(on) = 7 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A IDM TC = 25 C, pulse width limited by ... See More ⇒

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IXTP2N100P

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A... See More ⇒

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IXTP2N100P

Preliminary Technical Information X2-Class VDSS = 650V IXTY2N65X2 Power MOSFET ID25 = 2A IXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient... See More ⇒

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Detailed specifications: IXTP230N075T2, IXTP240N055T, IXTP24P085T, IXTP260N055T2, IXTP26P10T, IXTP26P20P, IXTP28P065T, IXTP2N100, 4435, IXTP2N60P, IXTP2N80P, IXTP2R4N120P, IXTP2R4N50P, IXTP300N04T2, IXTP32N20T, IXTP32P05T, IXTP32P20T

Keywords - IXTP2N100P MOSFET specs

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