3SK180 Datasheet. Specs and Replacement

Type Designator: 3SK180

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm

Package: SOT143

3SK180 substitution

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3SK180 datasheet

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 3sk180.pdf pdf_icon

3SK180

Ordering number ENN2129B N-Channel Silicon MOSFET (Dual Gate) 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions FM tuners and VHF tuners. unit mm 2046A Features [3SK180] 1.9 High power gain and low noise figure. 0.95 0.95 High forward transfer admittance. 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85 1 Drain 2.9 2 Source... See More ⇒

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3SK180

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3SK180

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 3sk186.pdf pdf_icon

3SK180

3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 1. Source 4 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S 10 V Gate 2 to source voltage VG2S 10 V Drain current ID 35 mA Channel power dissipation Pch 15... See More ⇒

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Detailed specifications: 3SK15A, 3SK16, 3SK162, 3SK169P, 3SK169Q, 3SK17, 3SK171, 3SK179, IRF640N, 3SK180-4, 3SK180-5, 3SK180-6, 3SK181, 3SK181-4, 3SK181-5, 3SK181-6, 3SK182

Keywords - 3SK180 MOSFET specs

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