3SK180-4 MOSFET. Datasheet pdf. Equivalent
Type Designator: 3SK180-4
Marking Code: DJ4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 125 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: SOT143
3SK180-4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3SK180-4 Datasheet (PDF)
3sk180.pdf
Ordering number:ENN2129BN-Channel Silicon MOSFET (Dual Gate)3SK180High-Frequency General-Purpose AmplifierApplicationsApplications Package Dimensions FM tuners and VHF tuners. unit:mm2046AFeatures [3SK180]1.9 High power gain and low noise figure.0.95 0.95 High forward transfer admittance.0.40.164 30 to 0.11 20.60.95 0.851 : Drain2.92 : Source
3sk186.pdf
3SK186Silicon N-Channel Dual Gate MOS FETApplicationUHF TV tuner RF amplifierOutlineMPAK-42311. Source42. Gate13. Gate24. Drain3SK186Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 12 VGate 1 to source voltage VG1S 10 VGate 2 to source voltage VG2S 10 VDrain current ID 35 mAChannel power dissipation Pch 15
Datasheet: 3SK16 , 3SK162 , 3SK169P , 3SK169Q , 3SK17 , 3SK171 , 3SK179 , 3SK180 , IRF3710 , 3SK180-5 , 3SK180-6 , 3SK181 , 3SK181-4 , 3SK181-5 , 3SK181-6 , 3SK182 , 3SK186 .
