IXTP3N100D2 Specs and Replacement
Type Designator: IXTP3N100D2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: TO220
IXTP3N100D2 substitution
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IXTP3N100D2 datasheet
ixta3n100p ixth3n100p ixtp3n100p.pdf
IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) ... See More ⇒
ixta3n120 ixtp3n120.pdf
VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC = ... See More ⇒
ixta3n120 ixtp3n120 ixth3n120.pdf
High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous... See More ⇒
Detailed specifications: IXTP2R4N120P, IXTP2R4N50P, IXTP300N04T2, IXTP32N20T, IXTP32P05T, IXTP32P20T, IXTP36N30P, IXTP36P15P, IRF530, IXTP3N100P, IXTP3N110, IXTP3N120, IXTP3N50D2, IXTP3N50P, IXTP3N60P, IXTP42N15T, IXTP42N25P
Keywords - IXTP3N100D2 MOSFET specs
IXTP3N100D2 cross reference
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IXTP3N100D2 substitution
IXTP3N100D2 replacement
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