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IXTP3N100P Spec and Replacement


   Type Designator: IXTP3N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 820 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO220

 IXTP3N100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP3N100P Specs

 ..1. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf pdf_icon

IXTP3N100P

IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB) ... See More ⇒

 7.1. Size:562K  ixys
 ixta3n120 ixtp3n120.pdf pdf_icon

IXTP3N100P

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC = ... See More ⇒

 7.2. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf pdf_icon

IXTP3N100P

High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous... See More ⇒

 8.1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf pdf_icon

IXTP3N100P

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM ... See More ⇒

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Detailed specifications: IXTP2R4N50P , IXTP300N04T2 , IXTP32N20T , IXTP32P05T , IXTP32P20T , IXTP36N30P , IXTP36P15P , IXTP3N100D2 , CS150N03A8 , IXTP3N110 , IXTP3N120 , IXTP3N50D2 , IXTP3N50P , IXTP3N60P , IXTP42N15T , IXTP42N25P , IXTP44N10T .

History: IPP60R190P6 | AP02N90JB

Keywords - IXTP3N100P MOSFET specs

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