IXTP460P2 PDF and Equivalents Search

 ..1. Size:156K  ixys
 ixta460p2 ixtp460p2 ixtq460p2 ixth460p2.pdf

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V... See More ⇒

 0.1. Size:154K  ixys
 ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V... See More ⇒

 9.1. Size:238K  ixys
 ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G ... See More ⇒

 9.2. Size:313K  ixys
 ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf

X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC... See More ⇒

 9.3. Size:66K  ixys
 ixtm4n100 ixtm4n100a ixtm4n95 ixtm4n95a ixtp4n100 ixtp4n100a ixtp4n95 ixtp4n95a.pdf

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 9.4. Size:111K  ixys
 ixtp450p2 ixth450p2 ixtq450p2.pdf

Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 RDS(on) 330m IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C, RG... See More ⇒

 9.5. Size:252K  ixys
 ixta42n25p ixtp42n25p ixtq42n25p.pdf

IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET IXTQ 42N25P RDS(on) 84 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V (TAB) VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 3... See More ⇒

 9.6. Size:64K  ixys
 ixtm4n45 ixtm4n45a ixtm4n50 ixtm4n50a ixtp4n45 ixtp4n45a ixtp4n50 ixtp4n50a.pdf

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 9.7. Size:64K  ixys
 ixtm4n80 ixtm4n80a ixtm4n90 ixtm4n90a ixtp4n80 ixtp4n80a ixtp4n90 ixtp4n90a.pdf

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 9.8. Size:284K  ixys
 ixty48p05t ixta48p05t ixtp48p05t.pdf

TrenchPTM VDSS = - 50V IXTY48P05T ID25 = - 48A Power MOSFET IXTA48P05T RDS(on) 30m IXTP48P05T P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 50 V S VDGR TJ = 25 C to 150 C, RGS = 1M - 50 V D (Tab) VGSS Continuous 15 ... See More ⇒

 9.9. Size:187K  ixys
 ixtp44n10t ixty44n10t.pdf

Preliminary Technical Information IXTP44N10T VDSS = 100 V TrenchMVTM IXTY44N10T ID25 = 44 A Power MOSFET RDS(on) 30 m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S TO-252 AA (IXTY) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V G VGSM Tr... See More ⇒

 9.10. Size:141K  ixys
 ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf

IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) 2.0 N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V ... See More ⇒

 9.11. Size:247K  inchange semiconductor
 ixtp48p05t.pdf

isc P-Channel MOSFET Transistor IXTP48P05T FEATURES Static drain-source on-resistance RDS(on) 30m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High-Side Switching Push Pull Amplifiers DC Choppers z Automatic Test Equipment Current Regulators z Ba... See More ⇒

 9.12. Size:259K  inchange semiconductor
 ixtp450p2.pdf

isc N-Channel MOSFET Transistor IXTP450P2 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA... See More ⇒