IXTP460P2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTP460P2
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 480 W
Предельно допустимое напряжение сток-исток (Uds): 500 V
Предельно допустимое напряжение затвор-исток (Ugs): 30 V
Пороговое напряжение включения Ugs(th): 4.5 V
Максимально допустимый постоянный ток стока (Id): 24 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 48 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.27 Ohm
Тип корпуса: TO220
IXTP460P2 Datasheet (PDF)
1.1. ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf 
Size:154K _ixys
PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 ? ? RDS(on) ? ? ? 270m? ? ? ? ? IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to
5.1. ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf Size:238K _ixys
Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25C to 150C 650 V TO-263 (IXTA) VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V G
5.2. ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf Size:141K _ixys
IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) ? 2.0 ? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C4 A IDM T
5.3. ixta42n25p ixtp42n25p ixtq42n25p.pdf Size:252K _ixys
IXTA 42N25P VDSS = 250 V PolarHTTM IXTP 42N25P ID25 = 42 A Power MOSFET ? ? IXTQ 42N25P RDS(on) ? 84 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 M? 250 V (TAB) VGS Continuous 20 V TO-220 (IXTP) VGSM Transient 30 V ID25 TC = 25 C42 A IDM T
5.4. ixtm4n100 ixtm4n100a ixtm4n95 ixtm4n95a ixtp4n100 ixtp4n100a ixtp4n95 ixtp4n95a.pdf Size:66K _ixys
5.5. ixtm4n45 ixtm4n45a ixtm4n50 ixtm4n50a ixtp4n45 ixtp4n45a ixtp4n50 ixtp4n50a.pdf Size:64K _ixys
5.6. ixtm4n80 ixtm4n80a ixtm4n90 ixtm4n90a ixtp4n80 ixtp4n80a ixtp4n90 ixtp4n90a.pdf Size:64K _ixys
5.7. ixtp450p2 ixth450p2 ixtq450p2.pdf Size:111K _ixys
Advance Technical Information PolarP2TM VDSS = 500V IXTP450P2 ID25 = 16A Power MOSFET IXTQ450P2 ? ? RDS(on) ? ? ? 330m? ? ? ? ? IXTH450P2 trr(typ) = 400ns N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXTP) Fast Intrinsic Diode G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-3P (IXTQ) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Co
5.8. ixtp44n10t ixty44n10t.pdf Size:187K _ixys
Preliminary Technical Information IXTP44N10T VDSS = 100 V TrenchMVTM IXTY44N10T ID25 = 44 A Power MOSFET ? ? RDS(on) ? 30 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S TO-252 AA (IXTY) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V G VGSM Transient 30 V S D (TAB) I
5.9. ixtp450p2.pdf Size:259K _inchange_semiconductor
isc N-Channel MOSFET Transistor IXTP450P2 ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PA
5.10. ixtp48p05t.pdf Size:247K _inchange_semiconductor
isc P-Channel MOSFET Transistor IXTP48P05T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤30mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High-Side Switching ·Push Pull Amplifiers ·DC Choppers z Automatic Test Equipment ·Current Regulators z Ba
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
