IXTP8N50PM Specs and Replacement

Type Designator: IXTP8N50PM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 400 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.88 Ohm

Package: TO220

IXTP8N50PM substitution

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IXTP8N50PM datasheet

 ..1. Size:106K  ixys
 ixtp8n50pm.pdf pdf_icon

IXTP8N50PM

Preliminary Technical Information IXTP 8N50PM VDSS = 500 V PolarHVTM ID25 = 4 A Power MOSFET RDS(on) 0.8 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS ... See More ⇒

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 ixta8n50p ixtp8n50p.pdf pdf_icon

IXTP8N50PM

IXTA 8N50P VDSS = 500 V PolarHVTM IXTP 8N50P ID25 = 8 A Power MOSFET RDS(on) 0.8 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25 C8 A IDM... See More ⇒

 8.1. Size:238K  ixys
 ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf pdf_icon

IXTP8N50PM

Preliminary Technical Information X2-Class VDSS = 650V IXTY8N65X2 Power MOSFET ID25 = 8A IXTA8N65X2 RDS(on) 500m IXTP8N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G... See More ⇒

 8.2. Size:116K  ixys
 ixtp8n65x2m.pdf pdf_icon

IXTP8N50PM

Advance Technical Information X2-Class VDSS = 650V IXTP8N65X2M Power MOSFET ID25 = 4A RDS(on) 550m (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V G D S VGSS Continuous 30 V VGSM Transient 40 V ... See More ⇒

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Detailed specifications: IXTP76P10T, IXTP7N60P, IXTP7N60PM, IXTP80N10T, IXTP80N12T2, IXTP86N20T, IXTP88N085T, IXTP8N50P, IRF730, IXTP90N055T, IXTP90N055T2, IXTP90N075T2, IXTP90N15T, IXTP96P085T, IXTP98N075T, IXTQ100N25P, IXTQ102N15T

Keywords - IXTP8N50PM MOSFET specs

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