All MOSFET. IXTP96P085T Datasheet

 

IXTP96P085T MOSFET. Datasheet pdf. Equivalent

Type Designator: IXTP96P085T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 298 W

Maximum Drain-Source Voltage |Vds|: 85 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 96 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 180 nC

Rise Time (tr): 55 nS

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: TO220

IXTP96P085T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP96P085T Datasheet (PDF)

5.1. ixta90n055t ixtp90n055t.pdf Size:215K _ixys

IXTP96P085T
IXTP96P085T

Preliminary Technical Information IXTA90N055T VDSS = 55 V TrenchMVTM IXTP90N055T ID25 = 90 A Power MOSFET ? ? RDS(on) ? 8.8 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C90 A ILRMS Lead Current

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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