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IXTP96P085T Spec and Replacement


   Type Designator: IXTP96P085T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 96 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO220

 IXTP96P085T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP96P085T Specs

 9.1. Size:215K  ixys
 ixta90n055t ixtp90n055t.pdf pdf_icon

IXTP96P085T

Preliminary Technical Information IXTA90N055T VDSS = 55 V TrenchMVTM IXTP90N055T ID25 = 90 A Power MOSFET RDS(on) 8.8 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC =... See More ⇒

 9.2. Size:302K  cn vbsemi
 ixtp98n075t.pdf pdf_icon

IXTP96P085T

IXTP98N075T www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Back... See More ⇒

Detailed specifications: IXTP86N20T , IXTP88N085T , IXTP8N50P , IXTP8N50PM , IXTP90N055T , IXTP90N055T2 , IXTP90N075T2 , IXTP90N15T , 20N60 , IXTP98N075T , IXTQ100N25P , IXTQ102N15T , IXTQ102N20T , IXTQ10P50P , IXTQ110N055P , IXTQ110N10P , IXTQ120N15P .

History: SSF20NS65 | RJK2009DPM | STW55N10 | CEP1195 | IXTP6N100D2 | RJK1529DPK

Keywords - IXTP96P085T MOSFET specs

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