3SK181-6 Datasheet. Specs and Replacement

Type Designator: 3SK181-6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 55 Ohm

Package: SOT143

3SK181-6 substitution

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3SK181-6 datasheet

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3SK181-6

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3SK181-6

3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 1. Source 4 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S 10 V Gate 2 to source voltage VG2S 10 V Drain current ID 35 mA Channel power dissipation Pch 15... See More ⇒

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3SK181-6

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Detailed specifications: 3SK179, 3SK180, 3SK180-4, 3SK180-5, 3SK180-6, 3SK181, 3SK181-4, 3SK181-5, IRFB4115, 3SK182, 3SK186, 3SK192P, 3SK192Q, 3SK193P, 3SK193Q, 3SK194, 3SK202Q

Keywords - 3SK181-6 MOSFET specs

 3SK181-6 cross reference

 3SK181-6 equivalent finder

 3SK181-6 pdf lookup

 3SK181-6 substitution

 3SK181-6 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs