3SK182 Datasheet. Specs and Replacement
Type Designator: 3SK182
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 143 Ohm
Package: SOT143
3SK182 substitution
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3SK182 datasheet
3sk186.pdf
3SK186 Silicon N-Channel Dual Gate MOS FET Application UHF TV tuner RF amplifier Outline MPAK-4 2 3 1 1. Source 4 2. Gate1 3. Gate2 4. Drain 3SK186 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S 10 V Gate 2 to source voltage VG2S 10 V Drain current ID 35 mA Channel power dissipation Pch 15... See More ⇒
Detailed specifications: 3SK180, 3SK180-4, 3SK180-5, 3SK180-6, 3SK181, 3SK181-4, 3SK181-5, 3SK181-6, 2N7000, 3SK186, 3SK192P, 3SK192Q, 3SK193P, 3SK193Q, 3SK194, 3SK202Q, 3SK202R
Keywords - 3SK182 MOSFET specs
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