All MOSFET. 3SK186 Datasheet

 

3SK186 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 3SK186
   Marking Code: FI-
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 0.035 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 67 Ohm
   Package: SOT143

 3SK186 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3SK186 Datasheet (PDF)

 ..1. Size:32K  1
 3sk186.pdf

3SK186 3SK186

3SK186Silicon N-Channel Dual Gate MOS FETApplicationUHF TV tuner RF amplifierOutlineMPAK-42311. Source42. Gate13. Gate24. Drain3SK186Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 12 VGate 1 to source voltage VG1S 10 VGate 2 to source voltage VG2S 10 VDrain current ID 35 mAChannel power dissipation Pch 15

 9.1. Size:181K  1
 3sk171 3sk179 3sk182 3sk193.pdf

3SK186

 9.2. Size:474K  1
 3sk181.pdf

3SK186 3SK186

 9.3. Size:177K  sanyo
 3sk189.pdf

3SK186 3SK186

 9.4. Size:172K  sanyo
 3sk180.pdf

3SK186 3SK186

Ordering number:ENN2129BN-Channel Silicon MOSFET (Dual Gate)3SK180High-Frequency General-Purpose AmplifierApplicationsApplications Package Dimensions FM tuners and VHF tuners. unit:mm2046AFeatures [3SK180]1.9 High power gain and low noise figure.0.95 0.95 High forward transfer admittance.0.40.164 30 to 0.11 20.60.95 0.851 : Drain2.92 : Source

Datasheet: 3SK180-4 , 3SK180-5 , 3SK180-6 , 3SK181 , 3SK181-4 , 3SK181-5 , 3SK181-6 , 3SK182 , STP75NF75 , 3SK192P , 3SK192Q , 3SK193P , 3SK193Q , 3SK194 , 3SK202Q , 3SK202R , 3SK206 .

 

 
Back to Top