All MOSFET. IXTQ200N10T Datasheet

 

IXTQ200N10T Datasheet and Replacement


   Type Designator: IXTQ200N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 550 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 152 nC
   tr ⓘ - Rise Time: 76 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO3P
 

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IXTQ200N10T Datasheet (PDF)

 6.1. Size:149K  ixys
 ixtq200n06p.pdf pdf_icon

IXTQ200N10T

PolarHTTM VDSS = 60 VIXTQ 200N06PID25 = 200 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-3P (IXTQ)VDSS TJ = 25 C to 175 C60 VVDGR TJ = 25 C to 175 C; RGS = 1 M 60 VVGS Transient 30 VVGSM Continuous 20 VGID25 TC = 25 C 200 AD(TAB)SID(RMS) E

 6.2. Size:205K  ixys
 ixth200n085t ixtq200n085t.pdf pdf_icon

IXTQ200N10T

Preliminary Technical InformationIXTH200N085T VDSS = 85 VTrenchMVTMIXTQ200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25 C 20

 6.3. Size:184K  ixys
 ixth200n075t ixtq200n075t.pdf pdf_icon

IXTQ200N10T

Preliminary Technical InformationIXTH200N075T VDSS = 75 VTrench GateIXTQ200N075T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 200 AILRMS

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