All MOSFET. IXTQ30N50L Datasheet

 

IXTQ30N50L Datasheet and Replacement


   Type Designator: IXTQ30N50L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 500 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO3P
 

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IXTQ30N50L Datasheet (PDF)

 0.1. Size:142K  ixys
 ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf pdf_icon

IXTQ30N50L

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

 5.1. Size:336K  ixys
 ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf pdf_icon

IXTQ30N50L

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

 7.1. Size:352K  ixys
 ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf pdf_icon

IXTQ30N50L

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

 7.2. Size:392K  ixys
 ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p ixtv30n60ps.pdf pdf_icon

IXTQ30N50L

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

SHOW MORE

Datasheet: IXTQ23N60Q , IXTQ240N055T , IXTQ24N55Q , IXTQ250N075T , IXTQ26N50P , IXTQ26N60P , IXTQ26P20P , IXTQ280N055T , IRF530 , IXTQ30N50L2 , IXTQ30N50P , IXTQ30N60L2 , IXTQ30N60P , IXTQ32P20T , IXTQ36N30P , IXTQ36N50P , IXTQ36P15P .

History: CHM09N7NGP | 7N65L-TQ2-T | SWN4N65K2 | RSF014N03 | OSG65R290AF | LSC70R640GT | P0260EIA

Keywords - IXTQ30N50L MOSFET datasheet

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