3SK192Q MOSFET. Datasheet pdf. Equivalent
Type Designator: 3SK192Q
Marking Code: 3XQ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.03 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 1.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 55 Ohm
Package: MINI-TYPE
3SK192Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3SK192Q Datasheet (PDF)
3sk192p 3sk192q.pdf
Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
3sk194.pdf
3SK194Silicon N-Channel Dual Gate MOS FETApplicationVHF/UHF TV tuner RF amplifierOutlineMPAK-42311. Source42. Gate13. Gate24. Drain3SK194Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 15 VGate 1 to source voltage VG1S 10 VGate 2 to source voltage VG2S 10 VDrain current ID 35 mAChannel power dissipation Pc
3sk199.pdf
3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 0.015 pF (typ.) rss Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 13
Datasheet: 3SK180-6 , 3SK181 , 3SK181-4 , 3SK181-5 , 3SK181-6 , 3SK182 , 3SK186 , 3SK192P , K4145 , 3SK193P , 3SK193Q , 3SK194 , 3SK202Q , 3SK202R , 3SK206 , 3SK222 , 3SK219 .
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