All MOSFET. IXTQ60N20L2 Datasheet

 

IXTQ60N20L2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTQ60N20L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 255 nC
   trⓘ - Rise Time: 330 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO3P

 IXTQ60N20L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTQ60N20L2 Datasheet (PDF)

 0.1. Size:149K  ixys
 ixtt60n20l2-ixtq60n20l2-ixth60n20l2.pdf

IXTQ60N20L2 IXTQ60N20L2

Advance Technical InformationLinear L2TM Power VDSS = 200VIXTT60N20L2MOSFET w/ Extended ID25 = 60AIXTQ60N20L2 RDS(on) 45m FBSOAIXTH60N20L2TO-268 (IXTT)N-Channel Enhancement ModeAvalanche RatedGSTabSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 200 VVGSS

 5.1. Size:135K  ixys
 ixta60n20t ixtp60n20t ixtq60n20t.pdf

IXTQ60N20L2 IXTQ60N20L2

TrenchTM VDSS = 200VIXTA60N20TPower MOSFET ID25 = 60AIXTP60N20T RDS(on) 40m IXTQ60N20TTO-263 AA (IXTA)N-Channel Enhancement ModeFor PDP DriversGAvalanche RatedSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M 200 VGVGSS Continuous 20 VDD (

 9.1. Size:252K  ixys
 ixta62n15p ixtp62n15p ixtq62n15p.pdf

IXTQ60N20L2 IXTQ60N20L2

IXTA 62N15P VDSS = 150 VPolarHTTMIXTP 62N15P ID25 = 62 APower MOSFETIXTQ 62N15P RDS(on) 40 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VGSVDGR TJ = 25 C to 175 C; RGS = 1 M 150 V(TAB)VGS Continuous 20 VVGSM Transient 30 VTO-220 (I

 9.2. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf

IXTQ60N20L2 IXTQ60N20L2

IXTQ69N30P VDSS = 300 VPolarHTTMIXTT69N30P ID25 = 69 APower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C69 A(TAB)

 9.3. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf

IXTQ60N20L2 IXTQ60N20L2

VDSS = 250 VIXTQ 64N25PPolarHTTMID25 = 64 AIXTT 64N25PPower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C64 A(TAB

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRLD110 | IXFH75N10

 

 
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