3SK194 Datasheet and Replacement
Type Designator: 3SK194
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.035 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Cossⓘ - Output Capacitance: 1.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 59 Ohm
Package: SOT143
3SK194 substitution
3SK194 Datasheet (PDF)
3sk194.pdf

3SK194Silicon N-Channel Dual Gate MOS FETApplicationVHF/UHF TV tuner RF amplifierOutlineMPAK-42311. Source42. Gate13. Gate24. Drain3SK194Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDS 15 VGate 1 to source voltage VG1S 10 VGate 2 to source voltage VG2S 10 VDrain current ID 35 mAChannel power dissipation Pc
3sk192p 3sk192q.pdf

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
3sk199.pdf

3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. Low reverse transfer capacitance: C = 0.015 pF (typ.) rss Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDS 13
Datasheet: 3SK181-5 , 3SK181-6 , 3SK182 , 3SK186 , 3SK192P , 3SK192Q , 3SK193P , 3SK193Q , AO3400 , 3SK202Q , 3SK202R , 3SK206 , 3SK222 , 3SK219 , 3SK223 , 3SK224 , 3SK227 .
History: MDIS2N65BTH
Keywords - 3SK194 MOSFET datasheet
3SK194 cross reference
3SK194 equivalent finder
3SK194 lookup
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History: MDIS2N65BTH



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