IXTQ86N25T Datasheet. Specs and Replacement

Type Designator: IXTQ86N25T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 540 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Id| ⓘ - Maximum Drain Current: 86 A

Electrical Characteristics

tr ⓘ - Rise Time: 156 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: TO3P

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IXTQ86N25T substitution

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IXTQ86N25T datasheet

 9.1. Size:324K  ixys
 ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf pdf_icon

IXTQ86N25T

IXTH 88N30P VDSS = 300 V PolarHTTM IXTK 88N30P ID25 = 88 A Power MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D VDSS TJ = 25 C to 150 C 300 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V TO-264 (IXTK) ... See More ⇒

 9.2. Size:90K  ixys
 ixtq80n28t.pdf pdf_icon

IXTQ86N25T

Advance Technical Infomation IXTQ 80N28T IXTQ 80N28T VDSS = 280 V Trench Gate ID25 = 80 A Power MOSFET RDS(on) = 49 m N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 280 V VDGR TJ = 25 C to 150 C; RGS = 1 M 280 V VGSM 30 V ID25 TC = 25 C80 A G IDRMS External lead cu... See More ⇒

 9.3. Size:159K  ixys
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IXTQ86N25T

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 9.4. Size:294K  ixys
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IXTQ86N25T

IXTK 82N25P VDSS = 250 V PolarHTTM IXTQ 82N25P ID25 = 82 A Power MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 M 250 V VGSS Continuous 20 V VGSM Transient 30 V G D ID25 TC = 25 ... See More ⇒

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Detailed specifications: IXTQ64N25P, IXTQ69N30P, IXTQ69N30PM, IXTQ74N20P, IXTQ75N10P, IXTQ76N25T, IXTQ82N25P, IXTQ86N20T, IRFZ48N, IXTQ88N28T, IXTQ88N30P, IXTQ90N15T, IXTQ96N15P, IXTQ96N20P, IXTQ96N25T, IXTR16P60P, IXTR170P10P

Keywords - IXTQ86N25T MOSFET specs

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