IXTQ86N25T MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTQ86N25T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Id|ⓘ - Maximum Drain Current: 86 A
   Qgⓘ - Total Gate Charge: 105 nC
   trⓘ - Rise Time: 156 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: TO3P

IXTQ86N25T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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