IXTQ86N25T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IXTQ86N25T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 540 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Максимально допустимый постоянный ток стока |Id|: 86 A
Общий заряд затвора (Qg): 105 nC
Время нарастания (tr): 156 ns
Сопротивление сток-исток открытого транзистора (Rds): 0.037 Ohm
Тип корпуса: TO3P
Аналог (замена) для IXTQ86N25T
IXTQ86N25T Datasheet (PDF)
ixth88n30p ixtk88n30p ixtt88n30p ixtq88n30p.pdf
IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)
ixtq80n28t.pdf
Advance Technical Infomation IXTQ 80N28TIXTQ 80N28T VDSS = 280 VTrench GateID25 = 80 APower MOSFETRDS(on) = 49 mN-Channel Enhancement ModeFor Plasma Display ApplicationsSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 280 VVDGR TJ = 25C to 150C; RGS = 1 M 280 VVGSM 30 VID25 TC = 25C80 AGIDRMS External lead cu
ixtt82n25p ixtq82n25p ixtk82n25p.pdf
VDSS = 250VIXTT82N25PPolarTMID25 = 82AIXTQ82N25PPower MOSFET RDS(on) 38m IXTK82N25PTO-268 (IXTT)N-Channel Enhancement ModeGAvalanche RatedSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 250 VTO-3P( IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient
ixtk82n25p ixtq82n25p ixtt82n25p.pdf
IXTK 82N25P VDSS = 250 VPolarHTTMIXTQ 82N25P ID25 = 82 APower MOSFET IXTT 82N25P RDS(on) 35 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-264 (IXTK)VDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25
ixth88n30p ixtk88n30p ixtq88n30p ixtt88n30p.pdf
IXTH 88N30P VDSS = 300 VPolarHTTMIXTK 88N30P ID25 = 88 APower MOSFET IXTQ 88N30P RDS(on) 40 m IXTT 88N30PN-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsD (TAB)GDVDSS TJ = 25 C to 150 C 300 VSVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGS Continuous 20 VTO-264 (IXTK)
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: SLC700MM10SCN2 | SLC500MM20SHN2 | SLC500MM15SHN2 | SLC500MM10SCT2 | SFW280N600C4 | SFW280N600BC4 | SFW1800N650C2 | SFW132N200I3 | SFW107N200C3 | SFW097N200C3 | SFW095N200C3 | SFW082N165C3 | SFW072N150C2 | SFW043N150C3 | SFW042N100C3 | SFW031N100C3