IXTQ90N15T MOSFET Datasheet: N-Ch, 150V, 90A. Full specification with pinout and replacement list

IXTQ90N15T Specs and Replacement

   Type Designator: IXTQ90N15T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 455 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 110 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO3P

IXTQ90N15T substitution

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IXTQ90N15T datasheet

9.1. Size:198K ixys
ixth96n20p ixtt96n20p ixtq96n20p.pdf pdf_icon

IXTH 96N20P VDSS = 200 V PolarHTTM IXTQ 96N20P ID25 = 96 A Power MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 200 V S (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGSS Continous 20 V TO-3P (IXTQ) VGSM Transient ... See More ⇒

9.2. Size:170K ixys
ixtq96n15p ixtt96n15p.pdf pdf_icon

IXTQ 96N15P VDSS = 150 V PolarHTTM IXTT 96N15P ID25 = 96 A Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C96 A G D (TAB) ... See More ⇒

9.3. Size:239K ixys
ixth96n20p ixtq96n20p ixtt96n20p.pdf pdf_icon