All MOSFET. IXTQ90N15T Datasheet

 

IXTQ90N15T Datasheet and Replacement


   Type Designator: IXTQ90N15T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 455 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 110 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO3P
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IXTQ90N15T Datasheet (PDF)

 9.1. Size:198K  ixys
 ixth96n20p ixtt96n20p ixtq96n20p.pdf pdf_icon

IXTQ90N15T

IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient

 9.2. Size:170K  ixys
 ixtq96n15p ixtt96n15p.pdf pdf_icon

IXTQ90N15T

IXTQ 96N15P VDSS = 150 VPolarHTTMIXTT 96N15P ID25 = 96 APower MOSFET RDS(on) 24 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 150 VVDGR TJ = 25 C to 150 C; RGS = 1 M 150 VVGSS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C96 A GD(TAB)

 9.3. Size:239K  ixys
 ixth96n20p ixtq96n20p ixtt96n20p.pdf pdf_icon

IXTQ90N15T

IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRF7413TRPBF | HYG013N03LS1C2 | OSG65R220KZF | SM3023NSV | SSM9926O | STD10NF06 | 4N70KG-TMS4-T

Keywords - IXTQ90N15T MOSFET datasheet

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