IXTR16P60P MOSFET. Datasheet pdf. Equivalent

   Type Designator: IXTR16P60P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 440 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.79 Ohm
   Package: ISOPLUS247

IXTR16P60P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS