IXTR170P10P Datasheet. Specs and Replacement

Type Designator: IXTR170P10P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 108 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 176 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: ISOPLUS247

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IXTR170P10P datasheet

 9.1. Size:196K  ixys
 ixtr120p20t.pdf pdf_icon

IXTR170P10P

Advance Technical Information TrenchPTM VDSS = - 200V IXTR120P20T Power MOSFETs ID25 = - 90A RDS(on) 32m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C - 200 V VDGR TJ = 25 C to 150 C, RGS = 1M - 200 V ... See More ⇒

 9.2. Size:145K  ixys
 ixtr102n65x2.pdf pdf_icon

IXTR170P10P

Advance Technical Information X2-Class VDSS = 650V IXTR102N65X2 Power MOSFET ID25 = 54A RDS(on) 33m (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VG... See More ⇒

 9.3. Size:192K  ixys
 ixtr140p10t.pdf pdf_icon

IXTR170P10P

Preliminary Technical Information TrenchPTM VDSS = -100V IXTR140P10T Power MOSFET ID25 = - 90A RDS(on) 13m P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V G VDGR TJ = 25 C to 150 C, RGS = 1M -100 V Isolated Tab D S VGSS Continuous 15 V VGSM Transient... See More ⇒

Detailed specifications: IXTQ86N25T, IXTQ88N28T, IXTQ88N30P, IXTQ90N15T, IXTQ96N15P, IXTQ96N20P, IXTQ96N25T, IXTR16P60P, EMB04N03H, IXTR200N10P, IXTR20P50P, IXTR30N25, IXTR32P60P, IXTR36P15P, IXTR40P50P, IXTR48P20P, IXTR62N15P

Keywords - IXTR170P10P MOSFET specs

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