All MOSFET. IXTR170P10P Datasheet

 

IXTR170P10P Datasheet and Replacement


   Type Designator: IXTR170P10P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 108 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 176 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: ISOPLUS247
 

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IXTR170P10P Datasheet (PDF)

 9.1. Size:196K  ixys
 ixtr120p20t.pdf pdf_icon

IXTR170P10P

Advance Technical InformationTrenchPTM VDSS = - 200VIXTR120P20TPower MOSFETs ID25 = - 90A RDS(on) 32m trr 300nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C - 200 VVDGR TJ = 25C to 150C, RGS = 1M - 200 V

 9.2. Size:145K  ixys
 ixtr102n65x2.pdf pdf_icon

IXTR170P10P

Advance Technical InformationX2-Class VDSS = 650VIXTR102N65X2Power MOSFET ID25 = 54A RDS(on) 33m (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVG

 9.3. Size:192K  ixys
 ixtr140p10t.pdf pdf_icon

IXTR170P10P

Preliminary Technical InformationTrenchPTM VDSS = -100VIXTR140P10TPower MOSFET ID25 = - 90A RDS(on) 13m P-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VGVDGR TJ = 25C to 150C, RGS = 1M -100 VIsolated TabDSVGSS Continuous 15 VVGSM Transient

Datasheet: IXTQ86N25T , IXTQ88N28T , IXTQ88N30P , IXTQ90N15T , IXTQ96N15P , IXTQ96N20P , IXTQ96N25T , IXTR16P60P , AO3407 , IXTR200N10P , IXTR20P50P , IXTR30N25 , IXTR32P60P , IXTR36P15P , IXTR40P50P , IXTR48P20P , IXTR62N15P .

History: JCS19N20F | NCEP050N12 | CS5M4905 | OSG65R900DTF | FRL130H | CS4N65A8HD | FQP16N15

Keywords - IXTR170P10P MOSFET datasheet

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