All MOSFET. IXTR200N10P Datasheet

 

IXTR200N10P Datasheet and Replacement


   Type Designator: IXTR200N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: ISOPLUS247
 

 IXTR200N10P substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXTR200N10P Datasheet (PDF)

 ..1. Size:151K  ixys
 ixtr200n10p.pdf pdf_icon

IXTR200N10P

VDSS = 100 VIXTR 200N10PPolarTM HiPerFETID25 = 120 APower MOSFET RDS(on) 8 m Electrically Isolated TabN-Channel Enhancement ModeAvalanche RatedFast Recovery DiodeISOPLUS 247TM (IXTR)Symbol Test Conditions Maximum Ratings E153432VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS 20 VVGSM

 9.1. Size:197K  ixys
 ixtr210p10t.pdf pdf_icon

IXTR200N10P

Advance Technical InformationTrenchPTM VDSS = -100VIXTR210P10TPower MOSFET ID25 = -158A RDS(on) 8m P-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VGVDGR TJ = 25C to 150C, RGS = 1M -100 VIsolated TabDSVGSS Continuous

Datasheet: IXTQ88N28T , IXTQ88N30P , IXTQ90N15T , IXTQ96N15P , IXTQ96N20P , IXTQ96N25T , IXTR16P60P , IXTR170P10P , MMD60R360PRH , IXTR20P50P , IXTR30N25 , IXTR32P60P , IXTR36P15P , IXTR40P50P , IXTR48P20P , IXTR62N15P , IXTR90P10P .

History: F5020-S | SPU07N60C3

Keywords - IXTR200N10P MOSFET datasheet

 IXTR200N10P cross reference
 IXTR200N10P equivalent finder
 IXTR200N10P lookup
 IXTR200N10P substitution
 IXTR200N10P replacement

 

 
Back to Top

 


 
.