IXTR200N10P Datasheet. Specs and Replacement

Type Designator: IXTR200N10P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: ISOPLUS247

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IXTR200N10P datasheet

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IXTR200N10P

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IXTR200N10P

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Detailed specifications: IXTQ88N28T, IXTQ88N30P, IXTQ90N15T, IXTQ96N15P, IXTQ96N20P, IXTQ96N25T, IXTR16P60P, IXTR170P10P, RU7088R, IXTR20P50P, IXTR30N25, IXTR32P60P, IXTR36P15P, IXTR40P50P, IXTR48P20P, IXTR62N15P, IXTR90P10P

Keywords - IXTR200N10P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.